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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS71/D High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER BSS71 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 200 200 6.0 0.5 0.5 2.86 2.5 14.3 - 65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 2 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RqJC Max 70 Unit C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)(1) Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = 150 Vdc, IB = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO 200 200 6.0 -- -- -- -- -- -- -- -- -- -- -- -- 50 500 50 Vdc Vdc Vdc nAdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc)(1) (IC = 30 mAdc, VCE = 10 Vdc)(1) Collector-Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) 1. Pulse Test: Pulse Width hFE 20 30 50 40 VCE(sat) -- -- -- VBE(sat) -- -- -- 0.7 0.8 0.85 0.8 0.9 1.0 0.15 0.25 0.35 0.3 0.4 0.5 Vdc 40 45 120 140 -- -- -- 250 Vdc -- v 300 ms, Duty Cycle v 2.0%. REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 BSS71 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 20 MHz) Output Capacitance (IE = 0, VCB = 20 Vdc, f = 1.0 MHz) Input Capacitance (IC = 0, VEB = 0.5 Vdc, f = 1.0 MHz) Turn-On Time (IB1 = 10 mAdc, IC = 50 mAdc, VCC = 100 Vdc) Turn-Off Time (IB2 = 10 mAdc, IC = 50 mAdc, VCC = 100 Vdc) ft Cob Cib ton toff 50 -- -- -- -- 70 3.5 45 100 400 200 -- -- -- -- MHz pF pF ns ns VCE = 10 V hFE, DC CURRENT GAIN 200 150 100 - 55C 50 C, CAPACITANCE (pF) TJ = +125C + 25C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb TJ = 25C Ccb 20 10 0.1 0.5 1.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 Figure 1. DC Current Gain f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 2. Capacitances 100 IC, COLLECTOR CURRENT (mA) 70 50 TJ = 25C VCE = 20 V f = 20 MHz 500 100 s 200 dc 100 50 2.5 WATT THERMAL LIMITATION @ TC = 25C 1.0 ms 30 20 20 10 5.0 3.0 BSS71 10 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 5.0 10 20 30 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Current-Gain -- Bandwidth Product Figure 4. Active-Region Safe Operating Area 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BSS71 V, TEMPERATURE COEFFICIENTS (mV/C) 14 12 V, VOLTAGE (VOLTS) 10 0.08 0.06 0.04 0.02 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC/IB = 5 50 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VB for VBE - 55C to 125C - 55C to 25C VC for VCE(sat) IC IB + 10 25C to 125C Figure 5. "On" Voltages Figure 6. Temperature Coefficients 1.0K 500 VCE = 100 V IC/IB = 5.0 TJ = 25C tr 100 50 t, TIME (ns) td 1.0K 500 ts 200 t, TIME (ns) 200 100 50 tf 20 10 1.0 20 10 1.0 VCE = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 7. Turn-On Time Figure 8. Turn-Off Time DUTY CYCLE < 1% tr, tf < 5 ns Vin 10 s 0V 1 k 0.1 F 1 k 50 VIN VBB ton 10.6 V toff 20 V - 9.2 V 1N914 VBB VCC = 100 V 2.2 k Vin 20 k Vout SAMPLING SCOPE 50 Figure 9. Switching Time Test Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BSS71 PACKAGE DIMENSIONS -A- B E C -T- F P L K STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS 0.51(0.002) MAXIMUM). DIM A B C D E F G H J K L M N P INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --- 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 --- 0.250 --- 45 _BSC 0.050 BSC --- 0.050 MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.406 0.533 --- 0.762 0.406 0.483 2.54 BSC 0.914 1.17 0.711 1.22 12.70 --- 6.35 --- 45_BSC 1.27 BSC --- 1.27 D 3 PL 0.36 (0.014) N -H- 1 2 3 M TA M H M N G M J CASE 22-03 (TO-206AA) ISSUE R Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 BSS71/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
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